STUDY ON THE DUCTILE DEFORMATION DOMAIN OF THE SIMPLE SHEAR IN ROCKS——TAKING BRITTLE FAULTS OF THE COVERING STRATA IN THE SOUTHERN JIANGSU AREA AS AN EXAMPLE

A study on the ductile deformation domain of the brittle fault in the shallow level ofthe crust is a new probe field for the modern structural geology. Taking the southern Jiang-su Province area as an example the orientation measurement of quartz crystals, the com-positional texture observation of three pressure sensitive minerals and the rheological param-eter determination of dislocation densities, etc. have been demonstrated and analysed basedon typical samples in the present paper. In addition, their generation mechanisms arealso discussed from the cataclastic rheology, the dynamic differentiation and the simpleshearing, specially, from the Ode strength theory. Finally, a generative relationship betweenthe ductile deformation domain of the brittle fault system, in the regional layer--slip andthe formation of the stratabound ore deposit is shown as well.     

Dislocation Analysis for Large-sized Sapphire Single Crystal Grown by SAPMAC Method

In this paper,large-sized sapphire (230×210 mm,27.5 kg) was grown by SAPMAC method (sapphire growth technique with micro-pulling and shoulder-expanding at the cooled center). Dislocation peculiarity in large sapphire boule (0001) basal plane was investigated by chemical etching,scanning electron microscopy and X-ray topography method. The triangular dislocation etch pit measured is 7.6×101～8.0×102 cm-2,in which relative high-density dislocations were generated at both initial and final stages of crystal growth. The analysis of single-crystal X-ray topography shows that there are no apparent sub-grain boundaries; the dislocation lines are isolated and straight. Finally,the origins of low-density dislocation in sapphire crystal are discussed by numerical analysis method.     

Cesium lead halide perovskite nanocrystals for ultraviolet and blue light blocking

Using cesium lead halide perovskite nanocrystals, CsPb(Cl/Br)_3, as a light absorber, we report a highly effective UV and blue light blocking film. The CsPb(Cl/Br)_3 nanocrystals are well dispersed in the ethyl cellulose(EC) matrix to compose a UV and blue light shielding film, and the absorption edge of the film is tunable by adjusting Cl to Br ratio using anion exchange. The CsPbCl_2 Br-EC film exhibits a transmittance of 5% at 459 nm, 90% at 478 nm and 95% in the range of 500–800 nm, which makes it excellent for UV and blue light shielding. In addition, the as-prepared EC-CsPb(Cl/Br)_3 film shows excellent photostability under UV irradiation. Results demonstrate that this EC-CsPb(Cl/Br)_3 based materials with sharp absorbance edges, tunable blocking wavelength, and high photostability can be useful for the applications in UV and blue light blocking and optical filters     

Succession of stacking disorder in hard-sphere crystal under gravity by Monte Carlo simulation

We have performed Monte Carlo simulations of hard spheres under gravity. Vertical boundaries are hard walls, which are well separated with each other. On the other hand, the periodic boundary condition is imposed in the horizontal direction. While we previously reported enhancement of crystallinity as well as crystallization due to gravity, we present here the results that demonstrate the succession of a defect. In case that the crystal formed at the bottom of the system includes kinds of stacking disorders for the (0 0 1) growth, twin band structure develops as mediated by a stacking disorder succeeded in the crystal formed in the fluid region which lies on the bottom crystal. In case that the stacking structure along horizontal direction changes from the (1 1 1) stacking to the (0 0 1) stacking, twin band structure in the (0 0 1) stacking region develops as succeeded in the crystal transformed. The twin band structure also becomes large with its upward growth.     

The Degree Preserving Spanning Tree Problem: Valid Inequalities and Branch-and-cut method

Given a connected undirected graph G, the Degree Preserving Spanning Tree Problem (DPSTP) consists in finding a spanning tree T of G that maximizes the number of vertices that have the same degree in T and in G. In this paper, we introduce Integer Programming formulations, valid inequalities and a Branch-and-cut algorithm for the DPSTP. Reinforced with new valid inequalities, the upper bounds provided by the formulation behind our Branch-and-cut method dominate previous DPSTP bounds in the literature.     

SINGLE AND DOUBLE EDGE INTERFACE CRACK SOLUTIONS FOR ARBITRARY FORMS OF MATERIAL COMBINATION

In this paper interfacial edge crack problems are considered by the application of the finite element method. The stress intensity factors are accurately determined from the ratio of crack-tip-stress value between the target given unknown and reference problems. The reference problem is chosen to produce the singular stress fields proportional to those of the given unknown problem. Here the original proportional method is improved through utilizing very refined meshes and post-processing technique of linear extrapolation. The results for a double-edge interface crack in a bonded strip are newly obtained and compared with those of a single-edge interface crack for different forms of combination of material. It is found that the stress intensity factors should be compared in the three different zones of relative crack lengths. Different from the case of a cracked homogeneous strip, the results for the double edge interface cracks are found to possibly be bigger than those for a single edge interface crack under the same relative crack length.     

A hybrid level set method for modelling detonation and combustion problems in complex geometries

We present an accurate and fast wave tracking method that uses parametric representations of tracked fronts, combined with modifications of level set methods that use narrow bands. Our strategy generates accurate computations of the front curvature and other geometric properties of the front. We introduce data structures that can store discrete representations of the location of the moving fronts and boundaries, as well as the corresponding level set fields, that are designed to reduce computational overhead and memory storage. We present an algorithm we call stack sweeping to efficiently sort and store data that is used to represent orientable fronts. Our implementation features two reciprocal procedures, a forward ‘front parameterization’ that constructs a parameterization of a front given a level set field and a backward ‘field construction’ that constructs an approximation of the signed normal distance to the front, given a parameterized representation of the front. These reciprocal procedures are used to achieve and maintain high spatial accuracy. Close to the front, precise computation of the normal distance is carried out by requiring that displacement vectors from grid points to the front be along a normal direction. For front curves in two dimensions, a cubic interpolation scheme is used, and G ¹ surface parameterization based on triangular patches is used for the three-dimensional implementation to compute the distances from grid points near the front. To demonstrate this new, high accuracy method we present validations and show examples of combustion-like applications that include detonation shock dynamics, material interface motions in a compressible multi-material simulation and the Stephan problem associated with dendrite solidification.     

Controllable growth and characterizations of hybrid spiral-like atomically thin molybdenum disulfide

Monolayer MoS₂ is an emerging two-dimensional semiconductor with wide-ranging potential applications in novel electronic and optoelectronic devices. Here, we reported controlled vapor phase growth of hybrid spiral-like MoS₂ crystals investigated by multiple means of X-Ray photoemission spectroscopy, scanning electron microscopy, atomic force microscopy, kelvin probe force microscopy, Raman and Photoluminescence techniques. Morphological characterizations reveal an intriguing hybrid spiral-like MoS₂ feature whose lower planes are AB Bernal stacking and upper structure is spiral. We ascribe the hybrid spiral-like structure to a screw dislocation drive growth mechanism owing to lower supersaturation and layer-by-layer growth mode. In addition, the electrostatic properties of MoS₂ microflakes with hybrid spiral structures are obvious inhomogeneous and dependent on morphology manifested by kelvin probe force microscopy. Our work deepens the understanding of growth mechanisms of CVD-grown MoS₂, which is also adoptable to other TMDC materials.     

The effect of noise on the dirac phase of electron in the presence of screw dislocation

The effect of noise on the Dirac phase of electron in the presence of screw dislocation is studied. An uncorrelated noise, which coincides with the nature of thermal fluctuations, is adopted. Results indicate that the Dirac phase is robust against the existing noise in the system.     

Orientation-dependent deformation mechanisms of bcc niobium nanoparticles

Nanoparticles usually exhibit pronounced anisotropic properties, and a close insight into the atomic-scale deformation mechanisms is of great interest. In present study, atomic simulations are conducted to analyse the compression of bcc nanoparticles, and orientation-dependent features are addressed. It is revealed that surface morphology under indenter predominantly governs the initial elastic response. The loading curve follows the flat punch contact model in [1 1 0] compression, while it obeys the Hertzian contact model in [1 1 1] and [0 0 1] compressions. In plastic deformation regime, full dislocation gliding is dominated in [1 1 0] compression, while deformation twinning is prominent in [1 1 1] compression, and these two mechanisms coexist in [0 0 1] compression. Such deformation mechanisms are distinct from those in bulk crystals under nanoindentation and nanopillars under compression, and the major differences are also illuminated. Our results provide an atomic perspective on the mechanical behaviours of bcc nanoparticles and are helpful for the design of nanoparticle-based components and systems.